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Dr. Rajni Gautam

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faculty-sbas-Dr. Rajni Gautam

Dr. Rajni Gautam

Assistant Professor

Education

  • PhD completed in 2014 from Semiconductor Device Research Laboratory, Department of Electronic science, University of Delhi, South campus.
  • Thesis Title: Analytical Modeling and Simulation of Cylindrical Gate All Around MOSFET- Reliability and Sensor Applications
  • MSc Electronics passed in 2009 from Department of Electronic Science, University of Delhi.
  • BSc Electronics passed in 2007 from Zakir Hussain College, University of Delhi.

Work Experience

  • Jan 2017 to April 2017 in Acharya Narendra dev College, University of Delhi
  • Aug2016 to Dec 2016 in Keshav Mahavidyalaya, University of Delhi
  • Jan 2014 to Mar 2015 in Zakir Hussain college, University of Delhi
  • Aug 2013 to Dec 2013 in ITM University

Biography

Rajni Gautam received Ph.D., M.Sc. and B. Sc. Degrees in Electronics from University of Delhi, India, in 2014, 2009, and 2007 respectively. She has 11 publications in International Journals of repute and 15 publications in Intaernational conferences. Her total citations are 123 with h-index of 7. Her research interests include device modeling and simulation for advanced metal oxide–semiconductor field-effect transistors (MOSFET) structures such as surrounding gate MOSFET with study of interface localized charges and analytical modeling, design, and simulation of Optically controlled MESFET/ MOSFET nanodevices.

Interest Area(s)

Microelectronics, Nanotechnology

Research

  • Device Modeling and Simulation
  • Analytical Modeling and Simulation of Reliability issues in MOSFET
  • Sensors based on MOSFET
  • Optically Controlled MOSFET.
  • Thesis Title- Analytical Modeling and Simulation of Cylindrical Gate All Around MOSFET- Relability and Sensor Applications.

Conferences/ Symposiums

  1. Rajni Gautam, Manoj Saxena, R.S.Gupta, Mridula Gupta,“ A Unified Two Dimensional Analytical Model Of Optically Controlled Silicon On Insulator MESFET ( OPSOI) For Advanced Channel Materials”,  International Conference on Fiber Optics and Photonics, (PHOTONICS 2011) ,December 11-15,  2010, IIT Guwahati, India.
  2. Rajni Gautam, Manoj Saxena, R.S.Gupta, Mridula Gupta,“ Impact Of Localised Charges On The Device Reliability Of The Silicon Nanoscale Surrounding Gate MOSFET”, National Conference and Workshop On Recent Advances in Modern Communication Systems and Nanotechnology (NCMCN- 2011), 6th -8th Jan. 2011, Jaipur, India.
  3. Rajni Gautam, Manoj Saxena, R.S.Gupta, Mridula Gupta, “Analysis and Simulation of Si/GaAs/GaN MESFET to study the Impact of Localised Charges on Device Performance”, IEEE Student’s Technology Symposium (TECHSYM), 14th -16th  Jan. 2011, IIT Kharagpur, India.
  4. Rajni Gautam, Manoj Saxena, R.S.Gupta and  Mridula Gupta,” Estimation of Performance Degradation of the Nanoscale Cylindrical Surrounding Gate MOSFET due to Hot Carrier Induced Localised Charges”, International Conference on Latest Trends in Nanoscience and Nanotechnology 2011, March 28-29 2011, Khaja BandaNawaz College of Engineering, Karnataka, India.
  5. Rajni Gautam, Manoj Saxena, R.S.Gupta, Mridula Gupta,“ High Sensitivity Photodetector Using Si/Ge/GaAs Metal Semiconductor Field Effect Transistor (MESFET)”, OPTICS’11– A Conference on Light, May 23-25,  2011, Calicut, Kerala, India.
  6. Rajni Gautam, Manoj Saxena, R.S.Gupta, Mridula Gupta,” SiGe Metal Semiconductor Field Effect Transistor (MESFET) Photodectetor Having Tailorable Photoresponse Using Bandgap Engineering ”, International conference on materials for advanced technologies (ICMAT 2011), 26th Jun-1st  July 2011, Suntec, Singapore.
  7. Rajni Gautam, Manoj Saxena, R.S.Gupta, and  Mridula Gupta,” Impact of Localized Charges on RF and Microwave Performance of Nanoscale Surrounding Cylindrical Gate MOSFET”, International Conference on microwave and Optical technology (ISMOT 2011),  June 20-23, 2011, Prague, Czech Republic, EU.
  8. Rajni Gautam, Manoj Saxena, R.S.Gupta, and  Mridula Gupta,” Channel Material Engineered Nanoscale Cylindrical Surrounding Gate MOSFET With Interface Fixed Charges”, The Second International workshop on VLSI (VLSI 2011), The Park Hotels, July 15 -17, 2011, Chennai, India.
  9. Rajni Gautam, Manoj Saxena, R.S.Gupta , and  Mridula Gupta, “A Wide Temperature Range ( 50- 500K ) Analysis For Nanoscale Surrounding Cylindrical Gate MOSFET With Localised Charges”, VLSI Design And Test Symposium (VDAT 2011), July 7-9, 2011, Pune, Maharasthra, India.
  10. Rajni Gautam, Manoj Saxena, R.S.
  11. Gupta and Mridula Gupta, “Investigation of RF/Microwave Performance Degradation for Cylindrical Nanowire MOSFET Due to Interface (Localised) Charges” International Semiconductor Device Research Symposium (ISDRS-2011) College Park, Maryland, December 7-9, 2011.
  12. Rajni Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta, “Influence of Localised charges on the temperature sensitivity of Si nanowire MOSFET” ,International workshop on physics of semiconductor devices (IWPSD 2011) IIT Kanpur, India December 19-22, 2011.
  13. Rajni Gautam, Manoj Saxena, R.S. Gupta and Mridula Gupta, “Temperature dependent RF/microwave characteristics of nanowire surrounding gate mosfet with localized charges” , International Conference on Nano Science and Technology (ICONSAT 2012), Hyderabad. India, January 20-23, 2012.
  14. Rajni Gautam, Manoj Saxena, R.S.Gupta, and  Mridula Gupta, “Impact of Localised Charges Present in the Interfacial Layer of the Schottky Contact in SOI MESFET”, IEEE International Conference on Devices, Circuits and Systems (ICDCS 2012), Karunya University, Coimbatore, Tamil Nadu, India, March 15-16, 2012.
  15. Rajni Gautam, Manoj Saxena, R.S.Gupta, and  Mridula Gupta, “Analytical Drain Current Model For Damaged Gate All Around (GAA) MOSFET Including Quantum and Velocity Overshoot Effects”, Nanotech Conference and Expo (Nanotech 2012), Santa Clara, California, CA, 18-21 June 2012.
  16. Rajni Gautam, Manoj Saxena, R.S.Gupta, and  Mridula Gupta, “Gate All Around MOSFET With Catalytic Metal Gate For Gas Sensing Applications”, NANOCON-2012, Bharti Vidyapeeth University, Pune, Maharasthra, India, 18th-19th, October, 2012.

Publications

  • Rajni Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta ,” Impact of Interface Fixed Charges on the Performance of the Channel Material Engineered Cylindrical Nanowire MOSFET”, International Journal of VLSI design & Communication Systems (VLSICS) vol.2, no.3, pp. 225-241, September 2011. ISSN:0976-1357 (online), 0976-1527 (print).
  • Rajni Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta ,” Effect of Localised Charges on Nanoscale Cylindrical Surrounding Gate MOSFET: Analog Performance and Linearity Analysis”, Microelectronics Reliability, vol.52, no.6, pp.989-994, Jan 2012. (Impact factor= 1.433), ISSN: 0026-2714.
  • Rajni Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta ,”Two  Dimensional  Analytical Subthreshold Model of Nanoscale Cylindrical Surrounding Gate MOSFET Including Impact of Localised Charges”, Journal of Computational and Theoretical Nanoscience, vol. 9, no.4, pp.602-610, April 2012. (Impact factor= 1.343).  ISSN: 1546-1955 (Print): EISSN: 1546-1963 (Online)
  • Rajni Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta ,” Numerical Analysis of Localised Charges impact on Static and Dynamic Performance of Nanoscale Cylindrical Surrounding Gate MOSFET Based CMOS Inverter”, Microelectronics Reliability, vol.53, no. 2, pp. 236-244, Sep 2012. (Impact factor= 1.433). ISSN: 0026-2714
  • Rajni Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta ,” Numerical Model of Gate All Around MOSFET With Vacuum Gate Dielectric For Biomolecule Detection”, IEEE Electron Device Letters, vol.33, no.12, pp. 1756-1758,  Dec 2012. (Impact factor= 3.048) , ISSN: 0741-3106.
  • Rajni Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta, “Hot Carrier Reliability of Gate All Around MOSFET for RF/Microwave Applications”. IEEE Transactions on Device and Material Reliability, vol. 13, no. 1, pp. 245 -251, Mar 2013. (Impact factor= 1.89), ISSN: 1530-4388.
  • Rajni Gautam, Manoj Saxena, R.S.Gupta , and  Mridula Gupta, “Gate All Around MOSFET with Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF performance”. IEEE Transactions on Electron Devices, vol. 60, no. 6, pp. 1820-1827, June 2013. (Impact factor= 2.6), ISSN: 0018-9383.
  • Rajni Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta,” Temperature Dependent Analytical Model of GAA MOSFET Including Localised Charges to Study Variations in its Temperature Sensitivity”, Microelectronics Reliability, Oct 2013 ,   vol.54, no.1, pp.37-43. (Impact factor= 1.433), ISSN: 0026-2714.
  • Rajni Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta ,” Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor”, Journal of Semiconductor Technology and Science, vol. 13, no. 5, pp. 500-510, Oct 2013 (Impact factor= 0.58), ISSN: 2233-4866 (online),  1598-1657 (print).
  • Rajni Gautam, Manoj Saxena, R.S.Gupta and Mridula Gupta ,” Gate All Around MOSFET With Catalytic Metal Gate For Gas Sensing Applications”, IEEE Transactions on Nanotechnology,  vol. 12, no. 6, pp. 939-944, Nov 2013 (Impact factor= 1.825), ISSN: 1536-125X.
  • Y Pratap, R Gautam, S Haldar, RS Gupta, M Gupta, “Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications”, Journal of Computational Electronics, vol 15 , no.2, pp., 492-501, Feb 2016, (Impact factor= 1.52), ISSN: 1569-8025 (Print) 1572-8137 (Online)